Electrical and Computer Engineering
Neuroprosthetic devices, growth and devices of compound semiconductors and silicon/germanium materials, monolithic and hybrid hetero-integration technologies, in-situ microscopy on advanced III-V compound semiconductor device architectures
Professor Dayeh's research encompasses materials science and device physics for discovering, understanding, and tailoring the physical properties of electronic materials at micro, nano, and atomic scales. His work relies on complementary innovation in devices and materials to solve problems in electronics, energy harvesting and storage, and for communicating with neural circuits in the brain. The course of research in his lab covers a complete chain of electronic materials and devices training from growth of Si/Ge and III-V materials using chemical vapor deposition (CVD) and metal organic CVD (MOCVD), morphology and structural analysis, semiconductor device fabrication and integration, to transport characterization and analysis. His current focus is on (1) high fidelity electro-neural interfaces for neurophysiology platforms and neuroprosthetic implants, (2) hybrid and monolithic integration of III-V materials on Si for advanced architecture and high performance III-V transistors, photovoltaics, and light emitters on Si, and (3) the dynamics of structure-property correlation, heterogeneous reactions and novel nanoscale phenomena, particularly relevant to III-V materials, using in-situ transmission electron microscopy.
Shadi Dayeh received his PhD degree in Electrical Engineering from the University of California San Diego in 2008. He joined Los Alamos National Laboratory the same year as a Director's Fellow and was appointed in 2010 to a Distinguished JR Oppenheimer Fellow at the Center for Integrated Nanotechnologies. An experimentalist with rigorous training in the III-V and Ge/Si material systems, his graduate and postdoctoral work laid down the foundations for understanding the growth, structure, and transport properties of InAs and Ge/Si heterostructured nanowires. His graduate research work was recognized with a Best Paper Award at the Electronic Materials Conference (2006), the Materials Research Society Graduate Student Award (2007) and Best Poster Award (2007), the Physics and Chemistry of Semiconductor Interfaces Young Scientist Award (2007), the IMAPS Advanced Substrates and Next Generation Semiconductors Best Paper Award (2008), the UCSD W.S.C. Chang Fellowship (2006). He received an ECE Outstanding Teaching Assistant Award (2005) and was appointed as an ECE Graduate Teaching Fellow (2007). At LANL, he became heavily acquainted with Ge/Si materials research and with transmission electron microcopy (TEM) characterization and analysis where he demonstrated many firsts in the Ge/Si heterostructured nanowire material system and received the Distinguished Postdoctoral Performance Award in 2010, and Los Alamos Achievement Awards in 2009, 2010, and 2011.